InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance
نویسنده
چکیده
An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170 V-mm. A 40 nm gate length In0.7Ga0.3As HEMT with Lside 1⁄4 100 nm and tins 1⁄4 10 nm shows excellent transconductance and subthreshold characteristics including gm 1⁄4 1.6 mS/mm, DIBL 1⁄4 122 mV/V and S 1⁄4 80 mV/ dec at VDS 1⁄4 0.5 V. In addition, this device exhibits an fT 1⁄4 530 GHz and fmax 1⁄4 445 GHz at VDS 1⁄4 0.7 V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.
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تاریخ انتشار 2011